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Silicon Phototransistor
OP580
Relative On-State Collector Current vs
Irradiance
Relative On-State Collector Current vs
Temperature
160
140
Normalized at E E = 5 mW/cm 2 Con-
ditions: V CE = 5 V,
140
130
Normalized at T A = 25° C .
Conditions: V CE = 5 V,
80°C
120
100
80
60
λ = 935 nm, T A = 25° C
120
110
100
90
λ = 935 nm, T A = 25° C
40
20
80
70
-40°C
0
1
2
3
4
5
6
7
8
-25
0
25
50
75
100
EE rradiance (mW/cm )
1000
2
Collector-Emitter Dark Current vs
Temperature
Conditions: Ee = 0 mW/
1.4
Temperature (°C)
Relative On-State Collector Current vs
Collector-Emitter Voltage
cm
W/
m
W/c
100
cm 2 V CE = 10V
1.2
1.0
6m
5m
2
2
m
4 mW/c
2
0.8
3 mW/cm
10
0.6
2
1
0
0.4
0.2
2 mW/cm 2
1 mW/cm 2
-25
0
25
50
75
100
0
0.1
0.2
0.3
0.4
0.5
Temperature (°C)
Collector-Emitter Voltage (V)
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue 1.3 05/10
Page 3 of 3
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相关代理商/技术参数
OP580
制造商:TT Electronics / OPTEK Technology 功能描述:Phototransistor
OP580/ABD,029
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OP580DA
功能描述:光电晶体管 Photo Darlington RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP581/ABD,029
功能描述:MOSFET OP581/UNCASED/PUTA// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
OP582/ABD,029
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OP58L
制造商:AXIOHM 功能描述:PAPER ROLL LONG FOR 1000 PTRS 制造商:AXIOHM 功能描述:PAPER ROLL, LONG, FOR 1000 PTRS 制造商:AXIOHM 功能描述:PAPER ROLL, LONG, FOR 1000 PTRS; External Length / Height:30m ;RoHS Compliant: NA
OP58TS
制造商:未知厂家 制造商全称:未知厂家 功能描述:High speed, high output pin photo diode